Enhanacement Mode Gallium Nitride (eGaN) FETs for Efficient Power Conversion in Space

Start Date/Time: Monday, April 23, 2018
End Date/Time: Thursday, April 26, 2018
Location: Space Power Workshop, Renaissance Los Angeles Airport Hotel – Los Angeles, CA
Application of GaN-on-Silicon Technology in Advanced Power Conversion Systems Used in Space

Speakers: Alex Lidow, Ph.D., CEO and Co-Founder, EPC

Enhancement-mode GaN-on-Si (eGaN) FETs have showed superior performance and demonstrated their ability to operate reliably under harsh environmental conditions and high radiation conditions. In this discussion we will present the state-of-the-art in enhancement mode GaN HEMT transistors and monolithic integrated circuits designed for higher frequency operation. We will also show recent testing of these devices under various radiation exposure conditions that demonstrate the robustness of this technology in harsh space environments.


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