Appearances

IEEE Applied Power Electronics Conference (APEC) 2017

Start Date/Time: Wednesday, March 29, 2017
End Date/Time: Wednesday, March 29, 2017
Location: Tampa Bay, Florida
Description:
GaN Transistors for Efficient Power Conversion

Speakers: Alex Lidow, Ph.D., , CEO and Co-Founder, EPC

In a post-silicon world, GaN is taking power conversion to the next level. Gallium nitride transistors are rapidly being designed into many power conversion applications. This seminar will provide an update on the state-of-the art in GaN transistor technology, highlighting the latest generation of EPC enhancement-mode GaN products and end-use applications including high power density DC-DC converters, high frequency envelope tracking, LiDAR, and wireless power transfer.

 

International Workshop on Power Supply On Chip (PwrSoC)

Start Date/Time: Monday, October 03, 2016
End Date/Time: Wednesday, October 05, 2016
Location: Madrid, Spain
Description:
Application of GaN-on-Silicon Technology in Advanced Power Conversion Systems

Speakers: Alex Lidow, Ph.D., , CEO and Co-Founder, EPC

It has been more than seven years since the first enhancement mode gallium nitride power transistors were first delivered to customers, and in that time the technology has advanced with a speed reminiscent of the early days of silicon integrated circuits. Today, scores of customers are in production with systems using GaN-on-silicon in applications such as envelope tracking, wireless power, LiDAR, medical imaging, energy efficient lighting, solar inverters, AC-DC, and DC-DC conversion. These discrete transistors, now produced by several companies, have delivered on the promise of high performance and low cost. The next major technological leap, GaN-on-silicon integrated circuits, further enlarge the performance and cost gap compared with silicon MOSFETs and LDMOS power transistors. In this paper we will show the latest in GaN integrated circuits, quantify their benefits in key applications, and show a roadmap towards greater complexity and functionality.

 

Getting the most from GaN Transistor and IC Chip-Scale Packaging

Start Date/Time: Thursday, November 03, 2016 11:00 AM – 12:00 PM
End Date/Time: Thursday, November 03, 2016 11:00 AM – 12:00 PM
Location: Online PELS Webinar
Description:
Application of GaN-on-Silicon Technology in Advanced Power Conversion Systems

Speakers: Alex Lidow, Ph.D., CEO and Co-Founder, Michael de Rooij, Ph.D., Vice President of Applications

GaN transistors and integrated circuits are significantly faster and smaller than their silicon ancestors. This has enabled many new applications such as envelope tracking, LiDAR, wireless energy transfer, and enhanced medical imaging. In this seminar we will discuss the design and PCB manufacturing methods users need to maximize the speed and size advantages required for embracing the chip-scale package.

 

Building Bridges Between the Americas, Japan and Asia

Start Date/Time: Monday, November 14, 2016
End Date/Time: Monday, November 14, 2016
Location: New York, New York
Description:
A global look at the energy, financials, healthcare, industrials, REITs, TMT, consumer and utilities sectors with senior management in a one-on-one setting

Speakers: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion and Keith Adams, CFO, Efficient Power Conversion

 

System Level Impact of GaN Power Devices in Server Architecture

Start Date/Time: Saturday, December 03, 2016 – Wednesday, December 07, 2016
End Date/Time: Saturday, December 03, 2016 – Wednesday, December 07, 2016
Location: San Francisco, CA
Description:
Application of GaN-on-Silicon Technology in Advanced Power Conversion Systems

Speakers: Alex Lidow, Ph.D., CEO and Co-Founder, EPC, David Reusch, Ph.D., Executive Director of Applications Engineering, and John Glaser, Ph.D.,Director of Applications

Gallium Nitride (GaN) integrated circuits and discrete transistors give the power system engineer a new set of tools for improving efficiency, cost, and power density in server and telecom systems. In this paper we examine the new benchmarks in performance as well as the various tradeoffs involved in designing power systems that take an input of 48 V and deliver it to the final destination – a 1 V digital load.

 

 

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