Interview with Cory Johnson of Bloomberg TV discussing GaN.
Alex joined International Rectifier (NYSE:IRF) as an R&D engineer and is the co-inventor of the HEXFET power MOSFET, a power transistor that displaced the bipolar transistor and launched modern power conversion. Over the 30 years Dr. Lidow was at International Rectifier, his responsibilities grew from engineer to head of R&D, head of manufacturing, head of sales and marketing, and finally CEO for 12 years. In addition to holding many power MOSFET and GaN FET patents, Alex has authored numerous publications; most recently he co-authored the first textbook on Gallium Nitride (GaN) transistors, GaN Transistors for Efficient Power Conversion. In 2004 he was elected to the Engineering Hall of Fame, and in 2005 International Rectifier, under his leadership was named one of the best managed companies in America by Forbes magazine. Dr. Lidow earned a Bachelor of Science in Applied Physics from the California Institute of Technology and a doctorate in Applied Physics from Stanford University. Since 1998 Alex has been a member of the Board of Trustees of the California Institute of Technology.
Alex is widely considered the foremost thought leader in GaN technology today.
UPDATE 19.Dec.2016: Alex has been chosen as one of the “60 People Steering Autonomous Vehicles” by Automotive New