GaN Adoption Tag Archive

Efficient Power Conversion (EPC) Sponsors Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

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In this conference GaN market and technology status were addressed and its future evolution was debated by mixing visions from designers, manufacturers, and end users.

GaN Con

Power management leaders at the inaugural GaN Con share a laugh for a group photo February 21, 2019, in Milpitas, CA. Left to Right: GaN Systems CEO Jim Witham, EPC CEO Alex Lidow, Navitas CEO Gene Sheridan.

Milpitas, Calif. — February 2019 — Efficient Power Conversion (EPC) joined forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con was “Power GaN: From promises to possible market explosion” and was focused on the emerging GaN market and the state-of-the-art for its underlying technology.

Under Yole’s base case scenario, GaN market is expected to grow steadily with a 55% CAGR between 2017 and 2023 (1). GaN has been a promising technology for a while. Several R&D institutes and industrial companies dedicated important investments to explore and evaluate this technology and make links with market demands. Yole’s analysts identified multiple power electronics & compound semiconductor companies, including leading silicon suppliers, strongly engaged in significant projects of development. GaN Con offered an opportunity to further explore the status of GaN technology and its adoption.

(1) Source: Power GaN: Epitaxy, Devices, Applications and Technology Trends report, Yole Développement, 2018

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The Growing Ecosystem for eGaN® FET Power Conversion

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GaN ecosystem power conversion

The Growing Ecosystem for eGaN FET Power Conversion

In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in te ecosystem of power electronics that support GaN-based designs.

 

 

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Driving GaN Into The Fast Lane

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Ask EPC’s chief executive, Alex Lidow, what the future holds for his GaN power device business, and automotive certification features prominently.

Recently delivering AEC Q101-qualified 80 V discrete transistors for LiDAR, 48V power distribution systems and other applications, the company’s latest enhancement-mode FETs deliver higher switching frequencies and efficiencies than silicon MOSFETs, in a smaller footprint. And this is just the beginning.

“We have more transistors as well as integrated circuits designed for LiDAR [sensors] and are proceeding with automotive certification here,” highlights Lidow. “LiDAR is under intense cost and performance pressure so integrating components and improving performance while lowering the cost is a big deal.”

Read More: https://compoundsemiconductor.net/article/104289/Driving_GaN_into_the_fast_lane

 

 

Alex Lidow, Founder and CEO, EPC

 

 

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IEEE Electron Devices Society Webinar – “GaN Devices and Applications” Presented by: Dr. Alexander Lidow

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GaN devices and Applications Abstract

GaN Transistors – Giving New Life to Moore’s Law

Enhancement-mode gallium nitride transistors have been commercially available for over eight years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET.  In this presentation, we will discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore’s Law is alive and well in the world of power semiconductor technology.  We will also enumerate the advantages of GaN over silicon in terms of performance, cost, and reliability. | http://epc-co.com/epc/EventsandNews/Events.aspx

Moore's Law

 

 

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TwIT = This Week in Technology

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The TWiT.tv Netcast Network with Leo Laporte features the #1 ranked technology podcast This Week in Tech, along with over 20 other top-ranked online shows.

Monday, August 14, 2017 – Alex and Leo sat down to talk about how Gallium Nitride (GaN) semiconductor technology is enabling new, disruptive technologies such as LiDAR, Wireless Power, Drones and a pill that will soon replace invasive medical procedures such as colonoscopies.

https://twit.tv/shows/triangulation

Leo Laporte

Alex and Leo Laporte on the set of “Triangulation”

 

 

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