Alex Lidow – Page 4 – Alex Lidow | Thought Leader in GaN Tech

GaN Transistors and ICs for 48 – 12 V Bi-Directional Converters for Mild Hybrid Vehicles

March 7, 2022

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Written by: Alex Lidow

Appearances

March 8, 2022 – March 10, 2022
EE|Times – Advanced Automotive Tech Forum
Location: Virtual Conference

GaN Transistors and ICs for 48 – 12 V Bi-Directional Converters for Mild Hybrid Vehicles

Speaker: Alex Lidow, Ph.D., CEO and Co-Founder of Efficient Power Conversion

Recent advances in automotive powertrain technology have accelerated the use of a dual 48 V/12 V bus architecture in mild hybrid vehicles, which can provide an 8-15% fuel consumption reduction. The availability of a 48 V bus also enables support of heavier loads like air-conditioning, faster heating of cabin, and faster, smoother starting with the use of 48 V Li-ion batteries. GaN-on-Si power devices are the best-suited semiconductors for this application as will be shown in this talk.

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Keynote Speaker at CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems

February 4, 2022

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Written by: Alex Lidow

Featured

Tuesday, March 15, 2022 – Thursday, March 17, 2022
CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems
Location: Berlin, Germany

GaN Reliability and Lifetime Projections

Keynote Speaker: Alex Lidow, Ph.D., CEO and Co-Founder of Efficient Power Conversion

The rapid adoption of GaN devices in many diverse applications calls for continued accumulation of reliability statistics and research into the fundamental physics of failure in GaN devices. Alex Lidow will speak about the strategy used to measure and predict lifetime based upon tests that force devices to fail under a variety of conditions. This information can be used to create stronger and higher performance products for the industry.

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Power Design with GaN for Space Apps: Q&A with EPC CEO Alex Lidow

December 11, 2021

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Written by: Alex Lidow

Articles • Featured

Unlike silicon, requiring custom manufacturing processes and packaging to insulate semiconductors from radiation effects, gallium nitride (GaN) devices are largely resistant to damage caused by radiation due to physical characteristics and structure.

Those attributes can be leveraged in the design of satellites. Orbiting electronics must withstand the effects of gamma rays, neutrons and heavy ions. Protons make up 85 percent of space radiation, while heavier nuclei make up the remainder. Radiation can deteriorate, interrupt knock out satellite electronic components.

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GaN Power Devices and Applications. A New Book from EPC.

November 5, 2021

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Written by: Alex Lidow

Videos

EPC CEO & Co-Founder, Alex Lidow shares insights on Efficient Power Conversion’s latest technical publication, GaN Power Devices and Applications. This book is an update by leading experts working with #GaN technology and applications.