The Ascent of GaN
Speaker: Alex Lidow, Ph.D., CEO and Co-founder, EPC
After more than 13 years of mass production, GaN-on-Si has gained widespread acceptance as the successor to the aging silicon MOSFET for voltage ranging between 40 V and 650 V. What, therefore, are the variables controlling the rate of growth of GaN power devices. We will dig into the experience, and lessons learned from the power MOSFET as well as the recent experiences with GaN in applications ranging from DC-DC conversion to motor drives and lidar in markets such as space, automotive, enterprise computing, and consumer products.
Panel Discussion: SiC and GaN Power Devices’ Reliability and Quality
Panelists: Doug Bailey, Vice President Marketing & Applications Engineering, Power Integrations; Anup Bhalla, Chief Engineer, Power Devices, Qorvo; Thierry Bouchet, CEO, Wise Integration; Alex Lidow, CEO, Efficient Power Conversion; Guy Moxey, Senior Director Power Products, Wolfspeed
WBG semiconductors have helped improve the performance of power systems and cut down on the cost of their parts. Failure rates in the parts-per-billion level are necessary to compete in markets with stricter standards. The primary reliability issues that face WBG semiconductors like SiC and GaN, as well as the corresponding quality standards for high-performance designs in several mission-critical applications, will be covered in this panel discussion. Aspects including material quality, thermal management, high-power operation, qualification testing and long-term performance will be covered by each panelist.