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Wine Down Friday with Alex Lidow

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In this video, Alex Lidow shares thoughts on his career, his family, his time at university, and his Ph.D. course, but also about energy trends, the shift to GaN that the power electronics ecosystem is ready to make, and the following weekend, with the finest wine!

Power Electronics News
April 22nd, 2022
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Roadblocks to GaN Adoption in Power Systems

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May 23, 2022 – May 24, 2022
US Power Semiconductor Executive Summit (US PSES)
Location: San Diego, CA

Roadblocks to GaN Adoption in Power Systems

Speaker: Alex Lidow, Ph.D., CEO and Co-Founder of Efficient Power Conversion

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EPC Releases Lowest On-Resistance Rad Hard Transistor for Demanding Space Applications

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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.

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Keynote Speaker at CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems

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Tuesday, March 15, 2022 – Thursday, March 17, 2022
CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems
Location: Berlin, Germany

GaN Reliability and Lifetime Projections

Keynote Speaker: Alex Lidow, Ph.D., CEO and Co-Founder of Efficient Power Conversion

The rapid adoption of GaN devices in many diverse applications calls for continued accumulation of reliability statistics and research into the fundamental physics of failure in GaN devices. Alex Lidow will speak about the strategy used to measure and predict lifetime based upon tests that force devices to fail under a variety of conditions. This information can be used to create stronger and higher performance products for the industry.

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Power Design with GaN for Space Apps: Q&A with EPC CEO Alex Lidow

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Unlike silicon, requiring custom manufacturing processes and packaging to insulate semiconductors from radiation effects, gallium nitride (GaN) devices are largely resistant to damage caused by radiation due to physical characteristics and structure.

Those attributes can be leveraged in the design of satellites. Orbiting electronics must withstand the effects of gamma rays, neutrons and heavy ions. Protons make up 85 percent of space radiation, while heavier nuclei make up the remainder. Radiation can deteriorate, interrupt knock out satellite electronic components.

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