Date: Wednesday, May 6, 2020
Time: 10:00 AM Pacific Daylight Time Register Now for 10:00 AM!
Time: 7:00 PM Pacific Daylight Time Register Now for 7:00 PM!
Duration: 1 hour
* Register for the time that is most convenient for your schedule
Join the webinar to discover the critical aspects of GaN power device reliability and how testing gallium nitride devices to failure demonstrates robustness unmatched by silicon power MOSFETs.
Join the webinar to learn more about:
- How the key mechanisms impacting dynamic RDS(on) have been identified and used to create more robust designs.
- How several eGaN® products were tested exhaustively throughout their data sheet safe operating area (SOA), and then taken to failure to probe the safety margins.
- How eGaN devices are tested to destruction under short-circuit conditions to determine how long and what energy density they withstand before catastrophic failure.
- How EPC developed a custom system to assess eGaN reliability over long-term lidar pulse stress conditions.
- After registering, you will receive a confirmation email containing information about joining the webinar.
All registrants will be entered for a chance to win a copy of GaN Transistors for Efficient Power Conversion, Third Edition. One book will be given away per webinar, please read Giveaway Rules.
All registrants will be entered for a chance to win a copy of GaN Transistors for Efficient Power Conversion, Third Edition. One book will be given away per webinar, please read Giveaway Rules.
Last modified: May 6, 2020
