Power Design with GaN for Space Apps: Q&A with EPC CEO Alex Lidow

552

Written by:

Unlike silicon, requiring custom manufacturing processes and packaging to insulate semiconductors from radiation effects, gallium nitride (GaN) devices are largely resistant to damage caused by radiation due to physical characteristics and structure.

Those attributes can be leveraged in the design of satellites. Orbiting electronics must withstand the effects of gamma rays, neutrons and heavy ions. Protons make up 85 percent of space radiation, while heavier nuclei make up the remainder. Radiation can deteriorate, interrupt knock out satellite electronic components.

Read article

Last modified: December 11, 2021

Leave a Reply

Your email address will not be published. Required fields are marked *